Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Using thermal co-evaporation we have prepared epitaxial Cu 2ZnSnS4 (CZTS) films on Si(001) substrates. A substrate temperature as high as 370 C and proper substrate cleaning (HF-dip followed by thermal desorption of surface hydrogens) are found to be necessary for the epitaxial growth. Detailed transmission electron microscopy measurements and X-ray diffraction studies are used to reveal the orientation relation of the CZTS films with the underlying silicon substrate, and the formation of defects within the CZTS layer. © 2014 Elsevier B.V.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules