Epitaxial germanium-on-insulator grown on (001) Si

Abstract

We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite oxide as an insulating epitaxial template. The full structures were grown by molecular beam epitaxy. We could successfully demonstrate a fully epitaxial approach to integrate a Germanium-on-insulator (GOI) structure on Si wafers. © 2007 Elsevier B.V. All rights reserved.