Publication
IEDM 2016
Conference paper

Engineering the electronic defect bands at the Si1-xGex/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si1-xGex pFETs

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Abstract

We identify the existence of electronic defect levels close to the Si1-xGex band edges associated with the Ge surface concentration at the Si1-xGex/IL interface (0 < x < 0.5). These electronic defects act as carrier scattering centers severely degrading the channel mobility and modulate the device threshold voltage. By successfully eliminating the electronic defects states at the Si1-xGex/IL interface, through control of the Ge surface concentration, high channel carrier mobility over wide charge densities in compressively-strained Si1-xGex channel pFETs is demonstrated. For the first time, the dominant scattering mechanisms for hole mobility in Si1-xGex channel pFETs are investigated to understand the carrier transport physics.

Date

31 Jan 2017

Publication

IEDM 2016

Authors

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