About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Empty surface electronic bands on CdTe(110)
Abstract
Angle-resolved inverse photoemission has for the first time been used to study the surface electronic band structure of a II-VI semiconductor, CdTe. The energy dispersion of an empty electronic surface state on CdTe(110), previously observed in normal emission only, has been mapped \ ̄gG-X̄ and \ ̄gG-X̄ ' in the surface Brillouin zone. In the course of this study new aspects of the surface electronic structure are observed. Firstly, we find two surface states with similar dispersions approximately 0.4 eV apart, one of which is the previously observed. Along \ ̄gG-X̄ ' they are both resonances but move into the projected bulk band gap along \ ̄gG-X̄ and become true surface states. Secondly, a rapidly dispersing structure is observed dispersing into the projected bulk band gap close to the X̄-point which we consequently identify as a third true surface state. These findings yield a new value for the surface band gap, located at \ ̄gG, of 2.9 eV. © 1990.