About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Electrical resistivity of acceptor carbon in GaAs
Abstract
The resistivity of GaAs implanted with carbon acceptors for concentrations spanning the insulating to the metallic regimes were investigated experimentally and theoretically between room temperature and 1.7 K. The resistivities obtained experimentally were compared with resistivity values calculated from a generalized Drude approach. The value of the critical impurity concentration was found to be about 10 18cm -3. Good agreement was obtained between the experimental results and calculations.