Publication
IEEE Electron Device Letters
Paper

Efficient and accurate schematic transistor model of FinFET parasitic elements

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Abstract

We present a schematic transistor model for multifinger multifin FETs, which greatly simplifies an initially complex network. The schematic finFET model accepts various finFET layout information and is accurate in predicting the overall finFET characteristics, including the effect of parasitic resistance (R) and capacitance (C) in a finFET. © 1980-2012 IEEE.