Effect of Minority Carrier Trapping on the Low-Temperature Characteristics of Si Transistors

Abstract

The effect of minority carrier traps on certain transistor characteristics is calculated. It is shown that trapping of electrons by donors in the base region of Si transistors can lead to the degradation with increasing temperature in β and f<inf>T</inf> of the type observed by Schlig on n-p-n Si transistors. Copyright © 1970 by The Institute of Electrical and Electronics Engineers. Inc.