Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- Shogo Mochizuki
- Conal E. Murray
- et al.
- 2017
- Journal of Applied Physics
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11 results for Teresa Pinto
Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction
- Judson R. Holt
- Anita Madan
- et al.
- 2013
- Journal of Applied Physics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
SIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- F. Ito
- H. Shobha
- et al.
- 2010
- ADMETA 2010
Crystallization characteristics of Ge-Sb phase change materials
- Simone Raoux
- Cyril Cabrai Jr.
- et al.
- 2009
- MRS Spring Meeting 2009
Phase transitions in Ge-Sb phase change materials
- Simone Raoux
- Cyril Cabral
- et al.
- 2009
- Journal of Applied Physics
Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
- A. Madan
- J. Li
- et al.
- 2008
- ECS Meeting 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- Zhibin Ren
- G. Pei
- et al.
- 2008
- VLSI Technology 2008
Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at. % Ge
- C. Cabral
- L. Krusin-Elbaum
- et al.
- 2008
- Applied Physics Letters