Dynamic electron microscopy of semiconductor nanowire and quantum dot growth

Abstract

We discuss the use of dynamic electron microscopy to visualise, in real time, the epitaxial growth of Si and Ge nanostructures. In situ observations of the formation of quantum dots and nanowires provide real time kinetic information that can be useful in determining the physical processes that control nanostructure growth. By comparing observations made during growth with observations of the same structures made after cooling and air exposure, we demonstrate the uniqueness of the information that can be acquired from dynamic microscopy during growth. © 2007 American Institute of Physics.