Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Capacitance-voltage and current-voltage measurements have been used to determine the barrier height of palladium-silicon Schottky diodes. All diodes were heat-treated to form palladium silicide and the doping range of the silicon was varied in the range 5 × 1015 cm-3 to 2 × 1018 cm-3. The zero-electric-field (flat-band) barrier height was found to be independent of doping concentration in the above range, having a value 0·75 ± 0·01 eV. On the other hand the zero-bias barrier height is more electric-field dependent than the predictions of the usual image-force theory. However, the results are well described by an additional barrier lowering term of the approximate form Δφ = -χmε{lunate}m where ε{lunate}m is the maximum junction electric-field and χm a characteristic length in the region of 20-40 Å. © 1971.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Imran Nasim, Melanie Weber
SCML 2024