Publication
Radiation Effects
Paper

Distribution of damage produced by ion implantation of silicon at room temperature

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Abstract

Experiments designed to determine the damage distribution produced by energetic heavy ions in Si are described. For low ion doses, the location of the damage peak was determined by changes, which were produced by ion damage, in the electrical properties of thin uniformly doped Si layers as a function of depth.

Date

13 Sep 2006

Publication

Radiation Effects

Authors

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