Electron paramagnetic resonance of Ge donors in GaP

Abstract

The EPR of the group IV donor Ge in GaP behaves differently from that of the other group IV donors Si and Sn. The spectrum is observable without the application of a uniaxial stress and the g-value (g = 2.000 ± 0.003) and linewidth are independent of the magnitude and the direction of stress. Possible explanations of this anomaly are discussed. © 1972.