About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Electron paramagnetic resonance of Ge donors in GaP
Abstract
The EPR of the group IV donor Ge in GaP behaves differently from that of the other group IV donors Si and Sn. The spectrum is observable without the application of a uniaxial stress and the g-value (g = 2.000 ± 0.003) and linewidth are independent of the magnitude and the direction of stress. Possible explanations of this anomaly are discussed. © 1972.