Annealing characteristics of n-type dopants in ion-implanted silicon

Abstract

Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.