About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Annealing characteristics of n-type dopants in ion-implanted silicon
Abstract
Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.