J.F. Ziegler, B.L. Crowder, et al.
Applied Physics Letters
Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.
J.F. Ziegler, B.L. Crowder, et al.
Applied Physics Letters
J.E. Smith Jr., M.H. Brodsky, et al.
Journal of Non-Crystalline Solids
J.E. Smith Jr., M.H. Brodsky, et al.
Physical Review Letters
F.F. Morehead, B.L. Crowder, et al.
Journal of Applied Physics