Ronald Troutman
Synthetic Metals
CoWP metal cap layers with good reliability (EM, SM, TDDB) for 32 nm thinwire interconnect structures in low-k (k=2.7) and porous ultralow-k (ULK) dielectrics (k=2.4) are demonstrated. Relative to structures not having CoWP, substantial EM benefits, comparable yield, and TDDB behavior are observed with the inclusion of CoWP metal caps layers. © 2010 Materials Research Society.
Ronald Troutman
Synthetic Metals
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990