Publication
Applied Physics Letters
Paper

Circular stacking faults in silicon

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Abstract

An electron microscopic diffraction study for circular stacking faults in silicon has been carried out. For the first time it has been possible to make direct correlation between the faults and subsurface precipitates, and to confirm that circular fault growth involves climb of a Frank dislocation from a precipitate site. © 1974 American Institute of Physics.

Date

09 Oct 2003

Publication

Applied Physics Letters

Authors

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