Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Small-area high-barrier Schottky diodes have a very high dynamic resistance. Consequently, special care is needed when measuring the current-voltage characteristic of such diodes. The reported observation of carrier recombination in the depletion layer of high-barrier IrSi/Si Schottky diodes at room temperature is shown to be due to instrumental loading of the diodes. Careful measurements show that carrier recombination is observed only below 200 K and is dependent on the dimension of the diode. © 1990 Springer-Verlag.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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Journal of Applied Mechanics, Transactions ASME