About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Bubble to T-I bar coupling in amorphous film small bubble devices
Abstract
In GdCoMo amorphous film bubble devices the drive field required for device operation has been found to be linearly dependent on the saturation magnetization of the bubble material over the range from 350 to 1200G. The devices studied were 8000 bit storage chips employing electron-beam-fabricated T-bars, Y-bars, and chevrons of 1μm linewidth. The bubble domain diameter and film thickness were approximately 2μm in all devices. The linear increase in drive field with 4πMsis found to be related with the energy required to move a bubble from one permalloy pattern to another across a gap. On the other hand, the field required to overcome coercivity in the movement of a bubble without leaving a single permalloy T-bar is found to be independent of variations in 4πMsof the bubble material. Coppyright © 1974 by The Institute of Electrical and Electronics Engineers, Inc.