Application of electron and ion beam analysis techniques to microelectronics

Abstract

The application of electron microscopy, scanning tunneling microscopy, and medium-energy ion scattering to microelectronics is reviewed. These analysis techniques are playing an important role in advancing the technology. Their use in the study of relevant phenomena regarding surfaces, interfaces, and defects is discussed. Recent developments and applications are illustrated using results obtained at the IBM Thomas J. Watson Research Center. Potential advances in the techniques are also discussed.