An experimental high-density memory array fabricated with electron beam

Abstract

LARGE-SCALE INTEGRATED-CIRCLIT technology has been relying on photolithography for pattern definition. With the device evolving towards smaller geometries for high density circuits or memory chips, the development of LSI is encountering some basic limitations in photolithography due to optical diffraction effects. It is generally recognized that electron-beam lithography can offer about an order of magnitude in spatial resolution over the conventional photolithography. In this paper, some experimental results of an 8-bit dynamic memory array which occupies only 1 mil fabricated with electron beam will be offered.