Conference paper
Multi-bit upsets in 65nm SOI SRAMs
Ethan H. Cannon, Michael S. Gordon, et al.
IRPS 2008
This paper presents upset rates of flip-flops in 65 nm commercial bulk technology predicted through modeling, and compares the predictions to upset rates measured with thorium foil, 15 MeV carbon ions, and 148 MeV protons. This paper demonstrates that 15 MeV carbon ions can be used to emulate the daughter products of neutron spallation reactions. © 2006 IEEE.
Ethan H. Cannon, Michael S. Gordon, et al.
IRPS 2008
Jonathan A. Pellish, Michael A. Xapsos, et al.
IEEE TNS
Ethan H. Cannon, Michael S. Gordon, et al.
IRPS 2008
Ethan H. Cannon, A.J. KleinOsowski, et al.
ICICDT 2007