Hiroshi Ito, Hoa D. Truong, et al.
J. Photopolym. Sci. Tech.
A series of de-protected polymers with pre-determined levels of de-protection were prepared in two types of high-resolution 248nm positive chemically amplified (CA) resists: conventional resists and silicon containing resists. The morphology and surface roughness of blend films of the protected and the de-protected polymers were monitored throughout the standard resist processing steps by using atomic force microscopy (AFM). Results suggest that resist line edge roughness stems in a large part from the phase incompatibility of the protected and the de-protected polymers in the line edge regions for positive CA resists.
Hiroshi Ito, Hoa D. Truong, et al.
J. Photopolym. Sci. Tech.
David R. Medeiros, Wayne M. Moreau, et al.
Proceedings of SPIE - The International Society for Optical Engineering
Wu-Song Huang, Wei He, et al.
Photomask and Next-Generation Lithography Mask Technology 2003
Hiroshi Ito, Hoa D. Truong, et al.
Microlithography 2005