About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Electrochemical and Solid-State Letters
Paper
Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
Abstract
One of the greatest challenges in fabricating a Ge-channel n-MOSFET is achieving a high n-type dopant activation within the source and drain regions. Conventional approaches to increase the electrically active doping level have been proven to be unsatisfactory, and typically the highest activation of n-type dopants is 4× 1019 cm-3 using phosphorus. This article describes a method to enhance the activation level of n-type dopants in Ge. Coimplantation of phosphorus and antimony leads to dopant activation over 1× 1020 cm-3 at 500°C. The enhancement of n-type dopant activation is attributed to reducing the implantation damage upon annealing due to increase in solid solubility of the dopants. © 2009 The Electrochemical Society.