P. Alnot, D.J. Auerbach, et al.
Surface Science
One of the greatest challenges in fabricating a Ge-channel n-MOSFET is achieving a high n-type dopant activation within the source and drain regions. Conventional approaches to increase the electrically active doping level have been proven to be unsatisfactory, and typically the highest activation of n-type dopants is 4× 1019 cm-3 using phosphorus. This article describes a method to enhance the activation level of n-type dopants in Ge. Coimplantation of phosphorus and antimony leads to dopant activation over 1× 1020 cm-3 at 500°C. The enhancement of n-type dopant activation is attributed to reducing the implantation damage upon annealing due to increase in solid solubility of the dopants. © 2009 The Electrochemical Society.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano