Publication
Applied Physics Letters
Paper

Accurate phase capacitance spectroscopy of transition metal silicon diodes

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Abstract

A complete understanding of Schottky barrier devices requires a knowledge of the electronic states at the metal-semiconductor interface. For this reason, a novel and accurate technique for measuring the capacitance of forward biased Schottky diodes has been developed. It is found that the measurement is extremely sensitive to the phase error and that the lock-in amplifier behaves in a nonlinear fashion at high signal current. These difficulties have been resolved to realize the interface state spectrum of a Pd/silicon Schottky barrier.

Date

01 Jan 1985

Publication

Applied Physics Letters

Authors

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