G. Kaindl, C. Laubschat, et al.
Physical Review B
An anisotropic direct-transition model for single-crystal semiconductors is shown to predict the direct-transition features seen in experimental photoemission spectra for Ge(111) for hν20 eV. By comparing theory with experiment, all the conduction and valence bands at L and X within 1 Ry of the gap are determined. Comparison of experiment with current band models suggests that an ∼ 10% self-energy correction may be needed to describe high-energy optical transitions. © 1974 The American Physical Society.
G. Kaindl, C. Laubschat, et al.
Physical Review B
E.K. Li, K.H. Johnson, et al.
Physical Review Letters
F.J. Himpsel, D.E. Eastman, et al.
Physical Review B
M. Aono, T.-C. Chiang, et al.
Solid State Communications