Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the silicon industry. For a technology to be widely used in the mixed signal applications arena it must offer more than just the HBT: it must have a complete set of passive elements and interconnects suitable for the rf design environment. This paper describes the development and current status of IBM's advanced SiGe HBT technology installed on a 200 mm CMOS/DRAM line. It reviews basic principles of HBT operation, discusses the aspects of the ultra high vacuum chemical vapor deposition (UHV/CVD) growth technique, describes the overall SiGe HBT process, the performance of the HBTs and support devices, and the circuit results achieved to date.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Hiroshi Ito, Reinhold Schwalm
JES
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME