Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the silicon industry. For a technology to be widely used in the mixed signal applications arena it must offer more than just the HBT: it must have a complete set of passive elements and interconnects suitable for the rf design environment. This paper describes the development and current status of IBM's advanced SiGe HBT technology installed on a 200 mm CMOS/DRAM line. It reviews basic principles of HBT operation, discusses the aspects of the ultra high vacuum chemical vapor deposition (UHV/CVD) growth technique, describes the overall SiGe HBT process, the performance of the HBTs and support devices, and the circuit results achieved to date.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009