32 and 45 nm radiation-hardened-by-design (RHBD) SOI latches

Abstract

Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Carlo modeling with a realistic heavy ion track structure, along with a new visualization aid (the Angular Dependent Cross-section Distribution, ADCD), allows one to quickly assess the improvements, or limitations, of a particular latch design. It was found to be an effective technique for making SEU predictions for alternative 32 nm SOI latch layouts. © 2011 IEEE.