On the Effects of Hydrogen in p-n-p Transistors under Forward Current Stress in a C-BiCMOS Technology
- J.Y.C. Sun
- Maw-Rong Chin
- 1993
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
PaperA New Damascene Structure for Submicrometer Interconnect Wiring
- Rajiv V. Joshi
- 1993
- IEEE Electron Device Letters
PaperArsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
PaperIndium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
PaperExtension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- Enrico Zanoni
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Electron Device Letters
PaperHigh-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
PaperExperimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
PaperEffects of X-Ray Irradiation on GIDL in MOSFET's
- Alexandre Acovic
- Charles Ching-Hsiang Hsu
- et al.
- 1992
- IEEE Electron Device Letters
PaperMetal Migration into Polysilicon Emitter After Very High Current Stress
- Denny D. Tang
- Catherine Wong
- et al.
- 1992
- IEEE Electron Device Letters
Paper