IEEE Electron Device Letters

Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's

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Indium has been used as an alternative channel implant in submicrometer channel Si MOSFET's, in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to L = 0.17-μm channel length. The device characteristics have been compared to uniform boron-implanted short-channel MOSFET's used in a 0.25-μm CMOS technology. Results indicate that nMOSFET's with nonuniform channel doping obtained by indium have superior short-channel effect (SCE) when compared to nMOSFET's with uniformly (boron) doped channel. © 1993 IEEE