Gary L. Patton, James H. Comfort, et al.
IEEE Electron Device Letters
Measurements of the impact-ionization multiplication coefficient M — 1 in advanced Si BJT’s up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9 • 105 V/cm) are presented. The intrinsic limitations affecting M — 1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M — 1 measurements is pointed out. An accurate theoretical prediction of the M — 1 coefficient at collector-base voltages close to bvcborequires that the contribution of holes to impact ionization be properly accounted for. © 1993 IEEE
Gary L. Patton, James H. Comfort, et al.
IEEE Electron Device Letters
Sophie Verdonckt-Vandebroek, Emmanuel F. Crabbé, et al.
IEEE Electron Device Letters
John D. Cressler, Emmanuel F. Crabbé, et al.
IEEE Transactions on Electron Devices
Joachim N. Burghartz, James H. Comfort, et al.
IEEE Electron Device Letters