IIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper
Publications
139 results at IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperIVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- S.L. Wright
- M.B. Rothwell
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperIIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperThe Effect of Trench Corner Shapes on Local Stress Fields : A Three-Dimensional Finite-Element Modeling Study
- Scott R. Stiffler
- Arturo O. Cifuentes
- 1993
- IEEE Transactions on Electron Devices
PaperIVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperNon-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
PaperElectrical and Optical Bandgaps of GexSi1-x Strained Layers
- J.J. Loferski
- J. Nijs
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperInvestigation of the Impact Ionization in the Hydrodynamic Model
- Kamel Souissi
- Farouk Odeh
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper