IEEE Transactions on Electron Devices

Paper

01 Jan 1993

IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition

View publication

Abstract

No abstract available.

Paper

Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures

W.T. Masselink, N. Braslau, et al.

Solid State Electronics

Paper

Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates

K. Weiser, P. Solomon, et al.

Journal of Applied Physics

Paper

Noise spectroscopy of deep level (DX) centers in GaAs-Al_xGa _1-xAs heterostructures

J.R. Kirtley, T.N. Theis, et al.

Journal of Applied Physics

Paper

Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials

M.A. Worsley, S. Bent, et al.

Journal of Applied Physics

View all publications