A Procedure to Reduce Cell Variation in Phase Change Memory for Improving Multi-Level-Cell Performances
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2015
- IMW 2015
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123 results for Yu Zhu
Spin-polarized tunneling study of spin-momentum locking in topological insulators
- Luqiao Liu
- Anthony Richardella
- et al.
- 2015
- Physical Review B - CMMP
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- Matthew Bright Sky
- Norma Sosa
- et al.
- 2015
- IEDM 2015
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
STT-MRAM with double magnetic tunnel junctions
- Guohan Hu
- J.H. Lee
- et al.
- 2015
- IEDM 2015
Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
- Can Bayram
- John A. Ott
- et al.
- 2015
- SPIE OPTO 2015
Over 12% efficiency Cu2ZnSn(SeS)4 solar cell via hybrid buffer layer
- Homare Hiroi
- Jeehwan Kim
- et al.
- 2014
- PVSC 2014
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED