In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
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72 results for Alessandro Callegari
Metal–GaAs interaction and contact degradation in microwave MESFETs
- Enrico Zanoni
- Alessandro Callegari
- et al.
- 2007
- Quality and Reliability Engineering International
Electron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer
- A.C. Callegari
- P. Jamison
- et al.
- 2006
- Journal of Applied Physics
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2003
- Journal of Applied Physics
Thermal stability of polycrystalline silicon/metal oxide interfaces
- A.C. Callegari
- E. Gousev
- et al.
- 2002
- Applied Physics Letters
Impact of moisture on charge trapping and flatband voltage in Al 2O3 gate dielectric films
- Sufi Zafar
- A.C. Callegari
- et al.
- 2002
- Applied Physics Letters
Interface reactions in ZrO 2 based gate dielectric stacks
- M. Gribelyuk
- A.C. Callegari
- et al.
- 2002
- Journal of Applied Physics
A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors
- Sufi Zafar
- Cyril Cabral Jr.
- et al.
- 2002
- Applied Physics Letters
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
- A.C. Callegari
- E. Cartier
- et al.
- 2001
- Journal of Applied Physics
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting