Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
We have developed a process for the fabrication of YBaCuO high-T c junctions based on the step-edge weak-link concept. The process emphasizes the creation of sharp and straight step edges on a substrate, and the restoration of oxygen content for superconducting materials at the step edges. A diamond-like carbon film is used as an ion milling mask for the creation of steps on substrates such as LaAlO3 and SrTiO3. Room-temperature plasma oxidation is shown to be effective in restoring T c from processing related degradation for grains residing at the step edge. Using this process, dc SQUIDs were fabricated with 77 K electrical performances matching, and in certain cases exceeding, similar SQUIDs made using bicrystal-based tilt-boundary weak-link junctions.
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
Yih-Cheng Shih, Masanori Murakami, et al.
Journal of Applied Physics
J.Z. Sun, W.J. Gallagher, et al.
Physical Review B
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983