V.Y. Merritt, H.J. Hovel
Applied Physics Letters
The thermal stability of a plasma-deposited amorphous carbon film was enhanced by using acetylene heavily diluted with He. The film preserved its hardness even after annealing at ≅590°C in Ar/H2, while a film deposited in similar conditions in an acetylene/Ar mixture softened significantly. The I-V characteristics of n- and p-type Si/amorphous carbon heterojunctions showed a 0.2 eV discrepancy. This is attributed to an offset in the conduction band of the amorphous carbon with respect to Si. © 1994 American Institute of Physics.
V.Y. Merritt, H.J. Hovel
Applied Physics Letters
H.J. Hovel, J.J. Urgell
Journal of Applied Physics
H.J. Hovel
Applied Physics Letters
J. Woodall, H.J. Hovel
Solar Cells