A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
- X. Chen
- S. Samavedam
- et al.
- 2008
- VLSI Technology 2008
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34 results for M. Sherony
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006
Body voltage and history effect sensitivity to key device parameters in 90nm PD-SOI
- S. Kawanaka
- M.B. Ketchen
- et al.
- 2004
- IEEE International SOI Conference 2004
A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ESSCIRC 2003
A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- J.O. Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- RFIC 2003
A power-efficient 33 GHz 2:1 static frequency divider in 0.12-μm SOI CMOS
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- RFIC 2003