3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits

This paper presents high-Q and high-density 3-dimensional VPP (vertical parallel plate) capacitors fabricated in a 0.12 urn SOI CMOS technology. An effective capacitance density of 1.76 fF/μm2 is obtained. A quality-factor of 22 at 1 GHz is obtained for a 20 pF VPP capacitor. Also, a VPP capacitor model is proposed for the first time to design the VPP capacitor.