History dependence of non-fully depleted (NFD) digital SOI circuits
- F. Assaderaghi
- G. Shahidi
- et al.
- 1996
- VLSI Technology 1996
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72 results for Harold J. Hovel
0.25μm low power CMOS devices and circuits from 8 inch SOI materials
- B. Chen
- A.S. Yapsir
- et al.
- 1995
- ICSICT 1995
Thermal stability and electrical properties of hydrogenated amorphous carbon film
- A.C. Callegari
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
Effect of the back gate conduction on 0.25 μm SOI devices
- J.L. Pelloie
- D.K. Sadana
- et al.
- 1994
- IEDM 1994
Photoluminescence and photoreflectance scanning of silicon-on-insulator materials
- H.J. Hovel
- 1993
- IEEE International SOI Conference 1993
Material development of SIMOX with a thin box
- D.K. Sadana
- H.J. Hovel
- et al.
- 1993
- IEEE International SOI Conference 1993
SOI technology outlook for sub-0.25 μm CMOS, challenges and opportunities
- B. Davari
- H.J. Hovel
- et al.
- 1993
- IEEE International SOI Conference 1993
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth
Space-charge-limited current measurements in semi-insulating GaAs
- Moshe Eizenberg
- Harold J. Hovel
- 1991
- Journal of Applied Physics