Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Publications
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72 results for Harold J. Hovel
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
- D. Schepis
- F. Assaderaghi
- et al.
- 1997
- IEDM 1997
Effect of the back gate conduction on 0.25 μm SOI devices
- J.L. Pelloie
- D.K. Sadana
- et al.
- 1994
- IEDM 1994
The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: Offering ohmic contact to light trapping
- Jeehwan Kim
- Ahmed Abou-Kandil
- et al.
- 2010
- ACS Nano
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
III-V photovoltaics - Recent developments and prospects
- N. Sosa
- Theodore G. Van Kessel
- et al.
- 2010
- ECS Transactions
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Advanced applications of semiconductor epitaxy for cutting edge integrated circuit technology
- D.K. Sadana
- M. Yang
- et al.
- 2006
- ECS Meeting 2006
Single wafer sSOI by SIMOX
- J.P. De Souza
- S.W. Bedell
- et al.
- 2006
- ISTDM 2006