Conference paper
Substrate engineering for germanium-based CMOS technology
S.W. Bedell, K.E. Fogel, et al.
ECS Meeting 2006
Conference paper
Material development of SIMOX with a thin box
Abstract
The aim of the SIMOX material development is at optimizing implant/annealing conditions which provide a thin BOX (≤ 2000 angstrom) and lower defects. It is believed that the annealing of low dose SIMOX would be very sensitive to the annealing ambient and this opens a new annealing parameter space for future low dose SIMOX work.