0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
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12 results for C. Sheraw
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Challenges and opportunities for high performance 32 nm CMOS technology
- J. Sleight
- I. Lauer
- et al.
- 2006
- IEDM 2006
Highly Manufacturable 40-50 GHz VCOs in a 120nm System-on-Chip SOI Technology
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IEDM 2003
22nm technology yield optimization using multivariate 3D virtual fabrication
- B. Cipriany
- B. Jagannathan
- et al.
- 2013
- SISPAD 2013
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007
Lower resistance scaled metal contacts to silicide for advanced CMOS
- A. Topol
- C. Sheraw
- et al.
- 2006
- VLSI Technology 2006
Silicon containing polymer in applications for 193 nm high NA lithography processes
- Scan Bums
- Dirk Pfeiffer
- et al.
- 2006
- SPIE Advanced Lithography 2006