Development of SiGe Indentation Process Control to Enable Stacked Nanosheet FET Technology
- Dexin Kong
- Daniel Schmidt
- et al.
- 2020
- ASMC 2020
Conference paper
Publications
23 results for Mary Breton
Fundamental characterization of stochastic variation for improved single-expose extreme ultraviolet patterning at aggressive pitch
- Jennifer Church
- Luciana Meli
- et al.
- 2020
- J. Micro/Nanolithogr. MEMS MOEMS
PaperStructural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2020
- VLSI Technology 2020
Conference paperAFM characterization for Gate-All-Around (GAA) devices
- Mary Breton
- Jennifer Fullam
- et al.
- 2020
- SPIE Advanced Lithography 2020
Conference paperFundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch
- Jennifer Church
- Luciana Meli
- et al.
- 2020
- SPIE Advanced Lithography 2020
Conference paperLine top loss and line top roughness characterizations of EUV resists
- Daniel Schmidt
- Karen Petrillo
- et al.
- 2020
- SPIE Advanced Lithography 2020
Conference paperMeasuring Local CD Uniformity in EUV vias with scatterometry and machine learning
- Dexin Kong
- Daniel Schmidt
- et al.
- 2020
- SPIE Advanced Lithography 2020
Conference paperA Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices
- Nicolas Loubet
- T. Devarajan
- et al.
- 2019
- IEDM 2019
Conference paperStudy of TiN and TaN underlayer properties and their influence on W growth
- Shanti Pancharatnam
- Gabriel Rodriguez
- et al.
- 2019
- IEEE Trans Semicond Manuf
PaperAn OCD perspective of line edge and line width roughness metrology
- Ravi Bonam
- R. Muthinti
- et al.
- 2017
- SPIE Advanced Lithography 2017
Conference paper