High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
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11 results for S. Polvino
Formation and microstructure of thin Ti silicide films for advanced technologies
- Praneet Adusumilli
- A. Carr
- et al.
- 2016
- IITC/AMC 2016
Efficient modeling of Bragg coherent x-ray nanobeam diffraction
- Stephan O. Hruszkewycz
- Martin V. Holt
- et al.
- 2015
- Optics Letters
Probing strain at the nanoscale with X-ray diffraction in microelectronic materials induced by stressor elements
- Conal E. Murray
- S. Polvino
- et al.
- 2013
- Thin Solid Films
Nanoscale strain characterization in microelectronic materials using X-ray diffraction
- Conal E. Murray
- Andrew Ying
- et al.
- 2012
- Powder Diffraction
Nanoscale silicon-on-insulator deformation induced by stressed liner structures
- Conal E. Murray
- Andrew Ying
- et al.
- 2011
- Journal of Applied Physics
Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions
- Conal E. Murray
- Z. Ren
- et al.
- 2009
- Applied Physics Letters
Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures
- Conal E. Murray
- K.L. Saenger
- et al.
- 2008
- Journal of Applied Physics
Real-space strain mapping of SOI features using microbeam X-ray diffraction
- Conal E. Murray
- S. Polvino
- et al.
- 2008
- Powder Diffraction
Synchrotron microbeam x-ray radiation damage in semiconductor layers
- Sean M. Polvino
- Conal E. Murray
- et al.
- 2008
- Applied Physics Letters