Publications

15 results for U. Kwon

Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- - Barry P. Linder
  - A. Dasgupta
  - et al.
- 2016
- IRPS 2016
An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS
- - X. Miao
  - Ruqiang Bao
  - et al.
- 2015
- IEEE Electron Device Letters
High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- - Ruqiang Bao
  - Brian Greene
  - et al.
- 2015
- IEDM 2015
Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond
- - Takashi Ando
  - B. Kannan
  - et al.
- 2014
- VLSI Technology 2014
Deposited ALD SiO₂ high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- - S. Siddiqui
  - M.M. Chowdhury
  - et al.
- 2013
- ECS Meeting 2013
Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process
- - W. McMahon
  - C. Tian
  - et al.
- 2013
- IRPS 2013
Role of point defects and HfO₂/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices
- - Rajan K. Pandey
  - Rajesh Sathiyanarayanan
  - et al.
- 2013
- Journal of Applied Physics
Bias temperature instability in high-κ/metal gate transistors - Gate stack scaling trends
- - Siddarth Krishnan
  - Vijay Narayanan
  - et al.
- 2012
- IRPS 2012
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
- - U. Kwon
  - K. Wong
  - et al.
- 2012
- VLSI Technology 2012