Effective Channel Mobility Extraction and Modeling of 10-nm Bulk CMOS FinFETs in Cryogenic Temperature Operation for Quantum Computing Applications
- Sumreti Gupta
- Sujit Kumar Singh
- et al.
- 2023
- IEEE T-ED
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28 results for Reinaldo A. Vega
Benchmarking Power Delivery Network Designs at the 5-nm Technology Node
- Nicholas A. Lanzillo
- Albert M. Chu
- et al.
- 2021
- IEEE T-ED
Impact of gamma-ray radiation on DC and RF performance of 10-nm bulk n-channel FinFETs
- K. Aditya
- R. Singh
- et al.
- 2020
- IEEE T-DMR
Impact of hot-carrier degradation on drain-induced barrier lowering in multifin SOI n-Channel FinFETs with self-heating
- Charu Gupta
- Anshul Gupta
- et al.
- 2020
- IEEE T-ED
Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-Heating
- Anshul Gupta
- Charu Gupta
- et al.
- 2019
- IEEE T-ED
Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction
- Tao Chu
- Reinaldo A. Vega
- et al.
- 2015
- Journal of Applied Physics
Study of random dopant fluctuation effects in Germanium-source tunnel FETs
- Nattapol Damrongplasit
- Changhwan Shin
- et al.
- 2011
- IEEE T-ED
Comparative study of FinFET versus quasi-planar HTI MOSFET for ultimate scalability
- Reinaldo A. Vega
- Tsu-Jae King Liu
- 2010
- IEEE T-ED