G. Tsutsui, Ruqiang Bao, et al.
IEDM 2016
An intrinsic short channel mobility extraction method is proposed by measuring two short-channel devices with different channel lengths and the same source/drain and contact geometry. The constant and dynamic components of external resistance are separated. Short-channel mobility degradation is observed and its origin is studied. The possible causes of the halo doping and the non-uniformity of the inversion layer charge are accounted for. The weaker temperature dependence of short channel devices indicates that the short channel mobility degradation may result from some combination of defect-induced and Coulomb-induced scattering near the S/D regions, differing in severity between NFETs and PFETs which employ, respectively, ion implant and embedded epitaxy as the primary component of S/D design.
G. Tsutsui, Ruqiang Bao, et al.
IEDM 2016
Anshul Gupta, Charu Gupta, et al.
IIRW 2019
Charu Gupta, Anshul Gupta, et al.
IEEE T-ED
Praneet Adusumilli, Emre Alptekin, et al.
ECS Meeting 2014