Optimizing band-edge high-κ/metal gate n-MOSFETs with ALD lanthanum oxide cap layers-oxidant and positioning effects
- Robert D. Clark
- H. Jagannathan
- et al.
- 2010
- ECS Transactions
Conference paper
Publications
60 results for Hemanth Jagannathan
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
- H. Kawasaki
- V.S. Basker
- et al.
- 2009
- IEDM 2009
Conference paperExtremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Conference paperEngineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition
- H. Jagannathan
- L.F. Edge
- et al.
- 2009
- ECS Meeting 2009
Conference paper22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Conference paperEngineering high dielectric constant materials for band-edge CMOS applications
- 2008
- ECS Meeting 2008
Conference paperHigh-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
Conference paperIntegrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis
- SangBum Kim
- Yuan Zhang
- et al.
- 2008
- IEEE Transactions on Electron Devices
PaperTemplated germanium nanowire synthesis using oriented mesoporous organosilicate thin films
- Hemanth Jagannathan
- Michael Deal
- et al.
- 2006
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperEffect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires
- Hemanth Jagannathan
- Yoshio Nishi
- et al.
- 2006
- Applied Physics Letters
Paper