SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
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9 results for C. Webster
SiGe power HBT's for low-voltage, high-performance RF applications
- Joachim N. Burghartz
- Jean-Olivier Plouchart
- et al.
- 1998
- IEEE Electron Device Letters
Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2000
- DRC 2000
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 2000
- RFIC 2000
A 5.5-GHz low noise amplifier in SiGe BiCMOS
- Herschel A. Ainspan
- Charles S. Webster
- et al.
- 1998
- ESSCIRC 1998
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 1999
- IMS 1999
High-frequency noise performance of SiGe p-channel MODFETs
- S.J. Koester
- J.O. Chu
- et al.
- 2000
- Electronics Letters
RF potential of a 0.18-μm CMOS logic device technology
- Joachim N. Burghartz
- Michael Hargrove
- et al.
- 2000
- IEEE Transactions on Electron Devices
Measured results on bandgap reference in SiGe BiCMOS
- H. Ainspan
- C. Webster
- 1998
- Electronics Letters