U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing
M. Arafa, P. Fay, et al.
Electronics Letters