Jungwook Yang, Joongho Choi, et al.
IEEE Journal of Solid-State Circuits
Paper
Measured results on bandgap reference in SiGe BiCMOS
Abstract
The measured temperature and supply voltage dependences of a bandgap reference circuit first published by Gilbert and implemented in IBM's SiGe BiCMOS process agree well with model predictions. The plot of VBGR against temperature exhibits less curvature than predicted elsewhere for SiGe BGRs.
Related
A. Rylyakov, J. Tierno, et al.
ISSCC 2009
Conference paper
5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology
M. Soyuer, J.O. Plouchart, et al.
RFIC 1997
J.O. Plouchart, H. Ainspan, et al.
CICC 1999